NTE Electronics TRANSISTOR NPN SILICON 65V IC=3A TO-60 CASE PO=13.5 WATT 175 MHZ RF POWER AMP/DRIVER Part No: NTE16002 RoHS: Unknown HTS: 85412900951 COO: US ECCN: EAR99 Supplier Standard Pack: 1 Configuration: Single Dimension: 12.6 x 10.92 x 19.8(Max) mm Material: Si Maximum Base Emitter Saturation Voltage: 1.5@5A@1A V Maximum Collector Base Voltage: 65 V Maximum Collector Emitter Saturation Voltage: 1@100mA@500mA V Maximum Collector Emitter Voltage: 40 V Maximum Collector Emitter Voltage Range: 40 to 50 V Maximum DC Collector Current: 3 A Maximum DC Collector Current Range: 2 to 8 A Maximum Emitter Base Voltage: 4 V Maximum Power Dissipation: 23000 mW Maximum Transition Frequency: 400(Typ) MHz Minimum DC Current Gain: 5@1A@5 V Minimum DC Current Gain Range: 2 to 30 Mounting: Stud Number of Elements per Chip: 1 Operating Temperature: -65 to 200 C Output Power: 13.5 W Packaging: N/A Pin Count: 3 Screening Level: N/A Supplier Package: N/A Type: NPN Unit of Measure: Per Each